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Temperature-dependent phase transition in orthorhombic [001](c)-oriented low In3+ doping 19PIN-45PMN-36PT single crystals

机译:正交晶体[001](c)取向的低In3 +掺杂19PIN-45PMN-36PT单晶的温度相关相变

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摘要

PIN-PMN-PT single crystals near the morphotropic phase boundary with low level of In3+ doping were grown through slow cooling their high temperature solution. Temperature-dependent dielectric constants and pyroelectric coefficients indicated two phase transitions, i.e. orthorhombic (O)-tetragonal (T)-cubic (C), took place in 19PIN-45PMN-36PT single crystals upon heating from 35 degrees C to 250 degrees C. The dielectric constant of O phase was higher than that of T phase, which was related to the polarization rotation. When the temperature approached to the depolarization temperature, tetragonal macrodomains converted to microdomains. The polarization change led to the analogous observed in the plots of temperature-dependent pyroelectric coefficients and dielectric constants. However, the temperature-dependent remanent polarization indicated a lower O-T phase transition temperature. Such a discrepancy in Ta could be ascribed to the decline of ferroelectric phase transition energy caused by the superposition of the AC field at each temperature test point when perform bipolar ferroelectric hysteresis loops measuring. The domain structure variation upon heating an unpoled [0 0 1]-oriented 19PIN-45PMN-36PT single crystal was observed with a polarized light microscopy, further indicating the occurrence of the two phase transitions. (C) 2015 Elsevier Ltd. All rights reserved.
机译:通过缓慢冷却其高温溶液,生长出具有低水平的In3 +掺杂的相变相边界附近的PIN-PMN-PT单晶。温度相关的介电常数和热电系数表明在19PIN-45PMN-36PT单晶中从35摄氏度加热到250摄氏度时发生了正交相(O)-四方(T)-立方(C)的两个相变。 O相的介电常数高于T相的介电常数,这与极化旋转有关。当温度接近去极化温度时,四边形大畴转变为微畴。极化变化导致在与温度相关的热电系数和介电常数的图中可以观察到类似的现象。但是,温度相关的剩余极化表明较低的O-T相变温度。 Ta的这种差异可归因于当执行双极铁电磁滞回线测量时,在每个温度测试点处的交流场的叠加引起的铁电相变能量的下降。用偏光显微镜观察了加热未极化[0 0 1]取向的19PIN-45PMN-36PT单晶时的畴结构变化,进一步表明发生了两个相变。 (C)2015 Elsevier Ltd.保留所有权利。

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