Ferroelectric properties of sol-gel deposited Pb(Zr,Ti)O_3/LaNiO_3 thin films on single crystal and platinized-Si substrates

摘要

Electrically conductive LaNiO_3 (LNO) and ferroelectric Pb(Zr_0.52Ti_0.48)O_3 (PZT) thin films were deposit on single crystal (100SrTiO_3 (STO), (100) LaNiO_3 (LAO), and Pt/Ti/SiO_2Si(100) substrates using solution deposition routes. X-ray diffraction and scanning electron microscopy were used to investigate the crystallinity and microstructure of the films. The surface bonding states of the PZT and LNO films were determined by X-ray photoelectron spectroscopy (XPS). The average room-temperature dielectric constant of the PZT films, measured at 1 kHz, was in the range 905-1002 and the dissipation factor was below 0.03 for all films. The remnant polarization and coercive electric field of the PZT/LNO films deposited on (100STO, (100)LAO, and Pt/Ti/SiO_2/Si substrates were 30, 32 and 19 μC/cm~2, and 84, 87 and 57 kV/cm, at applied electric field of 450 kV/cm, respectively.