Preparation and orientation control of Pb_1.1(Zr_0.3Ti_0.7)O_3 thin films by a modified sol-gel process

摘要

Preferred c-cxis orientated Pb_1.1(Zr_0.3Ti_0.7)O_3(PZT30/70) thin films were prepared on the Pt-coated silicon wafer using a sol-gel solid precursor approach. In this modified sol-gel process, the Ti-isopropoxide was chelated with acetylacetone, which makes the sol insensitive to moisture and eliminates the humidity effect on the sol stability. After lead acetate trihydrate and Zr-acetylacetonate were dissolved into the stabilized Ti-isopropoxide, a light yellow porous powder of lead zirconate titanate (PZT) precursor was obtained by drying the mixture at reduced pressure.