Analysis of refractive index profile in a silicon ion-implanted KTiOPO_4 waveguide

摘要

The Si~+ ion-implanted KTiOPO_4 optical waveguide was reported. The 3.0 MeV Si~+ ions at a dose of 2 x 10~(15) ions/cm~2 were implanted into the KTiOPO_4 crystal at room temperature to form a waveguide structure with a thickness of more than 2μm. The prism-coupling method was carried out to measure the effective refractive indices of the waveguide dark modes. The refractive index profile was reconstructed using reflectivity calculation method (RCM). The TRIM 98 (transport of ions in matter) code was applied for simulating the process of the ion implantation, which was believed to be helpful to a better understanding of the waveguide formation.