Effect of GaN doping on ZnO films by pulsed laser deposition

摘要

The present study reveals the codoping of Ga and N into ZnO films on sapphire substrates by pulsed laser deposition (PLD) with GaN doped ZnO targets. The glow discharge mass spectroscopy (GDMS) spectra confirm the presence of Ga and N in the doped films. The XRD measurements show that for GaN concentration up to 0.8 mol%, the full width at half maximum (FWHM) is almost unchanged thereby maintaining the crystallinity of the films, while for 1 mol% the FWHM increases. The PL spectra only show the strong near band edge (NBE) emission, whereas the deep level emissions are almost undetectable, indicating that they have been considerably suppressed. Our Hall measurements indicate that all the GaN doped ZnO films are of n-type. However, as the GaN concentration is greater than 0.6 mol%, the film shows a decrease in the carrier concentration, suggesting that N acceptors are not sufficient to compensate the native donor defects.