p-type Li-doped ZnMgO thin films were prepared on glass substrates by pulsed laser deposition. The growth temperature varied from 400 to 650℃. All the films were highly c-axis oriented according to X-ray diffraction patterns. Hall-effect measurements indicated that the Li-doped ZnMgO film grown above 600℃ failed in converting to p-type conduction. The film grown at 550℃ showed the lowest resistivity of 10Ω cm with a hole concentration of 2.5 × 10~(18)cm~(-3). Temperature-dependent PL measurements revealed a dominant emission at 3.52eV up to RT, which may be assigned as exciton bound to neutral-acceptor (A~0X) due to Li-doping. The Li acceptor activation energy in ZnMgO thin film was determined to be 135 ± 20meV.
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