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Non-galvanic template synthesis of CdSe nanowires using Anodic Alumina Membrane and their optical band gap determination

机译:阳极氧化铝膜的CdSe纳米线非电模板合成及其光学带隙的测定

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摘要

Highly ordered CdSe nanowires constituted from nanocrystallites (nanoparticles) have been successfully prepared using simple chemical route in paired cell using Anodic Alumina Membrane (AAM) as a template, cadmium sulphate as cation precursor in the presence of suitable complexing agent and Na_2SeSO_3 as Se precursor, respectively. The nanowires were characterized by SEM, EDAX, XRD and UV-Vis spectroscopic techniques. X-ray diffraction pattern indicates that the CdSe nanowires are grown with nanocrystalline cubic zinc blende structure. UV-Vis absorption spectrum is used to find out the optical band gap of nanowires which is found to be 2.25 eV.
机译:已成功使用配对氧化铝中的阳极氧化铝膜(AAM)作为模板,硫酸镉作为阳离子前体在合适的络合剂和Na_2SeSO_3作为硒前体的情况下,通过简单的化学途径在成对的电池中成功地制备了由纳米微晶(纳米颗粒)构成的高度有序的CdSe纳米线,分别。通过SEM,EDAX,XRD和UV-Vis光谱技术对纳米线进行了表征。 X射线衍射图表明CdSe纳米线的生长具有纳米晶立方锌混合结构。 UV-Vis吸收光谱用于发现纳米线的光学带隙,发现其为2.25eV。

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