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Selective-area growth of ZnO nanorod arrays via a sonochemical route

机译:通过声化学途径对ZnO纳米棒阵列进行选择性区域生长

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A simple and facile sonochemical route was described for the selective-area growth of well-aligned ZnO nanorod arrays on Si wafers under ambient conditions. ZnO nanorod arrays were selectively grown on preformed various patterns of zinc seed layer, such as letters and dots of uniform or non-uniform sizes. The average diameter and length of ZnO nanorods were 76 nm and 475 nm, respectively. The crystal structure of ZnO nanorods were investigated by transmission electron microscopy and X-ray diffraction. Based on this simple sonochemical technique, highly crystalline ZnO nanorod arrays can be selectively grown on other flat substrates with various patterned morphologies.
机译:描述了一种简单易行的声化学方法,用于在环境条件下在硅晶片上选择性排列良好排列的ZnO纳米棒阵列。 ZnO纳米棒阵列在预先形成的锌籽晶层的各种图案(例如大小一致或不均匀的字母和点)上选择性生长。 ZnO纳米棒的平均直径和长度分别为76 nm和475 nm。 ZnO纳米棒的晶体结构通过透射电子显微镜和X射线衍射进行了研究。基于这种简单的声化学技术,可以在具有各种图案形态的其他平坦基板上选择性生长高度结晶的ZnO纳米棒阵列。

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