首页> 外文期刊>Materials Letters >Structure and optical properties of ZnS/SiO_2 nanocables
【24h】

Structure and optical properties of ZnS/SiO_2 nanocables

机译:ZnS / SiO_2纳米电缆的结构和光学性质

获取原文
获取原文并翻译 | 示例
           

摘要

The nanocables with a single crystal ZnS core and a thin amorphous SiO_2 shell were successfully synthesized by a simple thermal evaporation method with the mechanism of Vapor-Solid growth. Its morphology and microstructure were determined by field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The ZnS/SiO_2 nanocables have diameters in the range of 20 nm-250 nm, lengths of several tens of micrometers. The core of the nanocable has a cubic sphalerite structure with the coexistence of periodically alternating twins along the [111] growth direction and stacking fault. The nanocables show strong room-temperature photoluminescence with four emission bands centering at 548 nm, 614 nm, 649 nm and 670 nm that may originate to the impurity of ZnS, existence of Si and oxide-related defects.
机译:通过简单的热蒸发法,以汽固生长机理成功合成了具有单晶ZnS核和薄的非晶SiO_2壳的纳米电缆。通过场发射扫描电子显微镜(FE-SEM),透射电子显微镜(TEM),能量色散X射线光谱(EDS)和光致发光光谱(PL)确定其形态和微观结构。 ZnS / SiO_2纳米电缆的直径在20nm-250nm范围内,长度为几十微米。纳米电缆的芯部具有立方闪锌矿结构,沿[111]生长方向和堆垛层错周期性交替出现孪晶。纳米电缆显示出强大的室温光致发光特性,其四个发射带的中心分别为548 nm,614 nm,649 nm和670 nm,可能源自ZnS杂质,Si的存在以及与氧化物有关的缺陷。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号