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Rod- And Wire-like Morphologies Of Tin Oxide Developed With Plasma Oxidation After Electrodeposition

机译:电沉积后等离子体氧化产生的氧化锡棒状和线状形态

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A new manufacturing method has been developed to prepare films composed of Sn-rich SnO_2 wires and rods using electrodeposition and subsequent plasma oxidation of pure Sn. The morphology of Sn-rich tin oxide grains varied significantly depending on the deposition current density. After a DC plasma oxidation process, the Sn, SnO, and SnO_2 phases were obtained as spherical grains when the previous electrodeposition was carried out at 6 A/dm~2 current density. The wire morphology was obtained only when the electrodeposition current was below 3 A/dm~2. The film produced at 1.5 A/dm~2 and then plasma oxidized showed wire morphology with single crystals of SnO_2 that formed in the (110) direction.
机译:已经开发出一种新的制造方法,以通过电沉积和随后的纯锡等离子体氧化来制备由富锡SnO_2线和棒组成的薄膜。富Sn的氧化锡晶粒的形貌根据沉积电流密度而显着变化。经过直流等离子体氧化处理后,以6 A / dm〜2的电流密度进行先前的电沉积时,获得的Sn,SnO和SnO_2相为球形晶粒。仅当电沉积电流低于3 A / dm〜2时才获得线材形态。薄膜以1.5 A / dm〜2的速度产生,然后被等离子氧化,其线形为在(110)方向上形成的SnO_2单晶。

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