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Structural and morphological studies of cuprous oxide thin film developed via. potentiostatic electrodeposition

机译:通过开发的氧化亚铜薄膜的结构和形态研究。恒电位电沉积

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Cuprous oxide is deposited on various substrates such as stainless steel (SS), Cr-Au (20–100 nm) coated SS, fluorine doped tin oxide on glass (FTO-G), Cr-Au (20–100 nm) coated FTO-G and Ga doped ZnO (GZO) through potentiostatic electrodeposition method. A wide range of potential is used for deposition and all the results are in good agreement with Pourbaix diagram of copper. Morphological properties are optimized with respect to temperature, applied potential and pH. All the films are characterized through X-Ray diffractometry, Scanning Electron Microscope, thickness measurements through profilometer and UV-Vis-NIR analysis. Our study demonstrates to deposit a high quality cuprous oxide film through potentiostatic electrodeposition with respect to continuity and larger grains, which may enhance photovoltaic performance and also for use in photoelectrochemical conversion systems.
机译:氧化亚铜沉积在各种基材上,例如不锈钢(SS),Cr-Au(20-100 nm)涂层的SS,玻璃上的氟掺杂氧化锡(FTO-G),Cr-Au(20-100 nm)涂层的FTO -通过恒电位电沉积方法掺杂了-G和Ga的ZnO(GZO)。沉积使用的电位范围很广,所有结果与铜的Pourbaix图完全吻合。在温度,施加电势和pH方面优化了形态学特性。所有薄膜均通过X射线衍射仪,扫描电子显微镜,通过轮廓仪和UV-Vis-NIR分析进行厚度测量来表征。我们的研究表明,就恒流性和较大晶粒而言,通过恒电位电沉积可沉积高质量的氧化亚铜膜,这可能会增强光伏性能,也可用于光电化学转换系统。

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