The influence of annealing temperatures on the properties of Bi_2VO_(5.5)/LaNiO_3/Si thin films

摘要

Bi_2VO_(5.5) ferroelectric thin films were fabricated on LaNiO_3/Si(100) substrate via chemical solution deposition. Ferroelectric and dielectric properties of the thin films annealed at 500-700 ℃ were studied. The thin film annealed at 700 ℃ exhibited more favorable ferroelectric and dielectric properties than those annealed at lower temperatures. The values of remnant polarization 2P_r and coercive field E_c for the film annealed at 700 ℃ are 10.62 μC/cm~2 and 106.3 kV/cm, respectively. The leakage current of the film is about 1.92 × 10~(-8) A/cm~2 at 6 V. The possible mechanism of the dependence of electrical properties of the films on the annealing temperature was discussed.