首页> 外文期刊>Thin Solid Films >Characterization of epitaxial thin films of Bi_2VO_(5.5) on La-doped SrTiO_3 substrates prepared by coating-pyrolysis process
【24h】

Characterization of epitaxial thin films of Bi_2VO_(5.5) on La-doped SrTiO_3 substrates prepared by coating-pyrolysis process

机译:涂覆热解法制备的La掺杂SrTiO_3衬底上Bi_2VO_(5.5)外延薄膜的表征

获取原文
获取原文并翻译 | 示例

摘要

Epitaxial thin films of Bi_2VO_(5.5) (BVO) were prepared on La-doped SrTiO_3 (LSTO) by a coating-pyrolysis process. The BVO films were (001)- and (114)-oriented on LSTO(100) and (110), respectively. Atomic force microscopic observations showed that very dense surfaces were obtained in the BVO films annealed at 600℃ and p_(O_2) = 10~(-4) atm. The step heights of the BVO(001) film were in the range of 2-12 nm, each approximately corresponding to a multiple of the c-axis parameter of BVO. The low-p_(O_2)-processed and O_2-postannealed BVO films resulted in reproducible P-E hysteresis loops for both orientations, although somewhat leaky characteristics were observed at higher applied voltages. Anisotropic behavior based on the orientation difference was clearly observed.
机译:通过涂覆热解法在掺La的SrTiO_3(LSTO)上制备了Bi_2VO_(5.5)(BVO)的外延薄膜。 BVO膜分别在LSTO(100)和(110)上取向为(001)和(114)。原子力显微镜观察表明,在600℃和p_(O_2)= 10〜(-4)atm退火的BVO薄膜中获得了非常致密的表面。 BVO(001)膜的台阶高度在2-12 nm的范围内,每个台阶高度大约对应于BVO的c轴参数的倍数。低p_(O_2)处理和O_2后退火的BVO膜在两个方向上都产生可重现的P-E磁滞回线,尽管在较高的施加电压下观察到了一些泄漏特性。明显观察到基于取向差异的各向异性行为。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号