机译:通过光辅助化学化学刻蚀形成具有各种形态的GaN纳米结构
Department of Physics and Key Laboratory of Acoustic Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, China Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea;
rnDepartment of Physics and Key Laboratory of Acoustic Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, China;
rnDepartment of Physics and Key Laboratory of Acoustic Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, China;
rnDepartment of Physics and Key Laboratory of Acoustic Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, China;
rnDepartment of Physics and Key Laboratory of Acoustic Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, China;
rnDepartment of Physics and Key Laboratory of Acoustic Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, China Accelerator Laboratory, Department of Physics, Wuhan University, Wuhan 4372, China;
rnQuantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea;
semiconductors; surfaces; nanomaterials;
机译:光辅助化学刻蚀制备的GaN金字塔阵列的形貌演变与表征
机译:光辅助电化学蚀刻工艺消除GaN中的干法蚀刻损伤的效果
机译:光辅助化学腐蚀形成六方氮化镓金字塔
机译:通过金属辅助化学蚀刻产生多孔Ga的形态和光学性质
机译:通过化学和形态转变工程化新型纳米结构
机译:光辅助化学蚀刻后通过退火沉积的GaN基薄膜LED表面的纳米棒
机译:光辅助电化学刻蚀形成的GaN多孔纳米结构的结构与光电化学性质之间的相关性