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首页> 外文期刊>Materials Letters >A facile route to realize p-type ZnO thin films via Li-F codoping: Experiments and theory
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A facile route to realize p-type ZnO thin films via Li-F codoping: Experiments and theory

机译：通过Li-F共掺杂实现p型ZnO薄膜的简便途径：实验和理论

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摘要

We report on p-type Li-F codoped ZnO (ZnO:(Li,F)] thin films prepared by pulsed laser deposition. The effects of substrate temperature on the structural and electrical properties of the films are investigated in detail. Secondary ion mass spectroscopy measurements confirm that Li and F have been incorporated into the films. We obtain an acceptable p-type conduction for the film grown at 550 ℃, which is further confirmed by a rectifying ZnO:(Li,F)/ZnO homojunction. The formation mechanism of p-type conduction might be closely related to the presence of the Li_(Zn)-F_o-Li_(Zn) complex, which preferably occupy the nearest-neighbor sites based on the first-principles calculations.
机译：我们报道了通过脉冲激光沉积制备的p型Li-F共掺杂ZnO（ZnO：（Li，F）]薄膜，并详细研究了衬底温度对薄膜结构和电性能的影响。光谱学测量证实了Li和F已被掺入薄膜中，我们在550℃下生长的薄膜获得了可接受的p型导电性，这可以通过ZnO：（Li，F）/ ZnO同质结的整流得到进一步证实。 p型传导的机制可能与Li_（Zn）-F_o-Li_（Zn）配合物的存在密切相关，根据第一性原理计算，该配合物最好占据最近的邻域。

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  • 来源
    《Materials Letters》 |2012年第2012期|p.34-37|共4页
  • 作者

    Ling Cao; Liping Zhu; Yaguang Li; Meijia Yang; Zhizhen Ye;

  • 作者单位

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China ,College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    semiconductors; pulsed laser deposition; thin film; p-type ZnO;

    机译：半导体;脉冲激光沉积薄膜;p型ZnO;

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