Temperature-Pressure-Sintering (TPS) diagram approach for sintering of silicon

J.M. Lebrun; C. Pascal; J.M. Missiaen

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Temperature-Pressure-Sintering (TPS) diagram approach for sintering of silicon

机译：硅烧结的温度-压力-烧结（TPS）图方法

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摘要

Temperature-( water vapor) Pressure-Sintering (TPS) diagrams were established to control the microstructure evolution and densiflcation during sintering of silicon. Experiments were performed under controlled humidified atmospheres and corroborated diagram predictions.

机译：建立了温度（水蒸气）压力烧结（TPS）图，以控制硅烧结过程中的微观结构演变和致密化。实验是在受控的加湿气氛下进行的，并证实了图表的预测。

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来源
《Materials Letters》 |2012年第2012期|p.65-68|共4页
作者
J.M. Lebrun; C. Pascal; J.M. Missiaen;
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作者单位

Laboratoire de Science et Ingenierie des Materiaux et Procides, SIMaP, Grenoble INP-CNRS-UJF, Domaine Universitaire, BP 75, F-38402 Saint-Martin d'Heres, France;

Laboratoire de Science et Ingenierie des Materiaux et Procides, SIMaP, Grenoble INP-CNRS-UJF, Domaine Universitaire, BP 75, F-38402 Saint-Martin d'Heres, France;

Laboratoire de Science et Ingenierie des Materiaux et Procides, SIMaP, Grenoble INP-CNRS-UJF, Domaine Universitaire, BP 75, F-38402 Saint-Martin d'Heres, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
silicon; sintering; microstructure; diagrams;

机译：硅;烧结;微观结构图表;

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Temperature-Pressure-Sintering (TPS) diagram approach for sintering of silicon

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