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Influence of Zn doping on structural, optical and magnetic properties of BiFeO_3 films fabricated by the sol-gel technique

机译:锌掺杂对溶胶-凝胶技术制备的BiFeO_3薄膜结构,光学和磁性的影响

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摘要

The multiferroic BiFe_(1-x)Zn_xO_3 (BFZO_x, x=0, 0.03, 0.06, and 0.09) films have been prepared on quartz substrates by the sol-gel technique. X-ray diffraction indicates that BFZO_x films characterize the distorted rhombohedral perovskite structure. Scanning electron microscopy (SEM) shows that Zn doping can improve the crystallinity of BFZO_x (x=0.06 and 0.09) films. With increasing Zn composition, the fundamental absorption edges of BFZO_x films show blue shift. Compared with BiFeO_3 film, the saturation magnetization (M_s) of BFZO_x (x=0.03, 0.06, and 0.09) films is significantly enhanced, which provides potential applications in information storage.
机译:已经通过溶胶-凝胶技术在石英衬底上制备了多铁性BiFe_(1-x)Zn_xO_3(BFZO_x,x = 0、0.03、0.06和0.09)薄膜。 X射线衍射表明BFZO_x薄膜表征了扭曲的菱面体钙钛矿结构。扫描电子显微镜(SEM)表明,Zn掺杂可以改善BFZO_x(x = 0.06和0.09)薄膜的结晶度。随着锌成分的增加,BFZO_x薄膜的基本吸收边缘呈现蓝移。与BiFeO_3薄膜相比,BFZO_x(x = 0.03、0.06和0.09)薄膜的饱和磁化强度(M_s)显着提高,这为信息存储提供了潜在的应用。

著录项

  • 来源
    《Materials Letters》 |2014年第15期|49-52|共4页
  • 作者单位

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China;

    Instrumental Analysis and Research Center, Institute of Materials, Shanghai University, 99 Shangda Road, Shanghai 200444, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China;

    National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China;

    National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    BiFeO_3; Zn doping; Thin films; Optical and magnetic properties;

    机译:BiFeO_3;锌掺杂薄膜;光学和磁性;

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