Fabrication of Zn_xIn_(1-x)S quantum Dot-sensitized TiO_2 nanotube arrays and their photoelectrochemical properties

摘要

Complete composition-tuned Zn_xIn_(1-x)S (0＜x＜1) quantum dots were deposited on TiO_2 nanotube arrays by the successive ionic layer absorption and reaction (SILAR) method. The deposition of Zn_xIn_(1-x)S nanoparticles on the upper and inner surface of the TiO_2 NTs was confirmed by field emission scanning electron (FE-SEM) and transmission electron microscopes (TEM). The Zn_xIn_(1-x)S/TiO_2 nanotube arrays exhibited high absorption in the visible light region due to the narrow band gap of Zn_xIn_(1-x)S. Zn_(0.4)In_(0.6)S/ TiO_2 NTs electrodes showed the optimal photoelectrochemical properties under visible light illumination.