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机译:通过紫外线辅助电化学刻蚀的GaN基LED的光致发光特性
Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China|Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China;
Shandong Sport Univ, Coll Sports & Hlth, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China;
GaN-based LED; Thin films; UV-assisted electrochemical etching; Nanopores; Raman; Photoluminescence;
机译:通过使用紫外线辅助电化学蚀刻增强多孔GaN的光学性能
机译:使用BCl_3 / Cl_2化学方法对GaN进行电感耦合等离子体刻蚀,并对刻蚀样品进行光致发光研究
机译:电化学刻蚀的p〜+型GaAs表面的结构和光学性质:刻蚀电解质中HF的存在的影响
机译:紫外线辅助电化学和无电刻蚀制备的纳米镓的光学性能比较研究
机译:对未经蚀刻,蚀刻,用自蚀刻底漆处理或密封的人类牙釉质渗透性的体外研究。
机译:NCCL中不同通用粘合剂在蚀刻和冲洗,选择性蚀刻和自蚀刻应用模式下的二十四个月临床表现–一项随机对照临床试验
机译:在极稀的HF溶液中通过电化学蚀刻制备的多孔硅层的光致发光特性