机译:用LSMO / TiO2双层缓冲液外延集成在GaN衬底上的高性能BiFe0.95Mn0.05O3铁电薄膜
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China|Shanghai Inst Technol, Sch Mat Sci & Engn, 100 Haiquan Rd, Shanghai 201418, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China;
Ferroelectrics; Bismuth ferrite; Bi-layer buffer; Epitaxial growth; GaN integration;
机译:使用金红石型TiO2缓冲层在GaN / AlGaN / GaN / Si(111)衬底上集成外延Pb(Zr0.52Ti0.48)O-3薄膜
机译:在具有MgO缓冲层的GaAs衬底上生长的外延LSMO膜
机译:ZnO缓冲层的结晶度对沉积在c-蓝宝石衬底上的外延(ZnO:Al)/(ZnO:Ga)双层薄膜性能的影响
机译:外延BIFEO.97mno.03O3薄膜的铁电特性,不同晶体取向沉积在缓冲Si基板上
机译:各向异性衬底上外延铁电薄膜的应变工程
机译:在Si衬底上外延生长高质量GaN膜的新方法:MBE和PLD的结合
机译:外延Srruo3薄膜沉积在SRO缓冲-Si(001)基板上的铁电PB(Zr0.2Ti0.8)O3薄膜