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Effect of Pt buffer layer on crystal structure and magnetic properties of hexagonal barium ferrite films

机译:铂缓冲层对六角形钡铁氧体薄膜晶体结构和磁性能的影响

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摘要

Hexagonal barium ferrite films have been deposited on Pt(111)/Al2O3(0001) substrates by pulsed laser deposition. The influence of Pt buffer layer on the crystal structure and magnetic properties of barium ferrite film has been studied. X-ray diffraction 0-20 reveals the crystallization temperature of film is decreased by the 20 nm-thick Pt buffer layer. Furthermore, pole figure analysis shows that the orientation of films is greatly improved by Pt buffer layer. Magnetic hysteresis loops represent the saturation magnetization (M-s) and uniaxial anisotropy field (H-k) are greatly depended on the Pt buffer layer. Consequently, BaM film with 20 nm Pt buffer layer have Ms of 358 emu/cm(3) and Hk of 16.7 kOe which are comparable with the theoretical value of BaM bulk. (C) 2017 Elsevier B.V. All rights reserved.
机译:六角形钡铁氧体薄膜已通过脉冲激光沉积法沉积在Pt(111)/ Al2O3(0001)基板上。研究了Pt缓冲层对钡铁氧体薄膜晶体结构和磁性能的影响。 X射线衍射0-20表明,膜的结晶温度由于厚度为20 nm的Pt缓冲层而降低。此外,极图分析表明,Pt缓冲层大大改善了薄膜的取向。磁滞回线代表饱和磁化强度(M-s),而单轴各向异性场(H-k)很大程度上取决于Pt缓冲层。因此,具有20 nm Pt缓冲层的BaM膜的Ms为358 emu / cm(3),Hk为16.7 kOe,与BaM体的理论值相当。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Materials Letters》 |2017年第1期|263-265|共3页
  • 作者单位

    Hangzhou Dianzi Univ, Inst Electron Device & Applicat, Hangzhou 310018, Zhejiang, Peoples R China;

    Hangzhou Dianzi Univ, Inst Electron Device & Applicat, Hangzhou 310018, Zhejiang, Peoples R China;

    Hangzhou Dianzi Univ, Inst Electron Device & Applicat, Hangzhou 310018, Zhejiang, Peoples R China;

    Hangzhou Dianzi Univ, Inst Electron Device & Applicat, Hangzhou 310018, Zhejiang, Peoples R China;

    Hangzhou Dianzi Univ, Inst Electron Device & Applicat, Hangzhou 310018, Zhejiang, Peoples R China;

    Hangzhou Dianzi Univ, Inst Electron Device & Applicat, Hangzhou 310018, Zhejiang, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Magnetic materials; Thin films; X-ray techniques;

    机译:磁性材料;薄膜;X射线技术;

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