CH3NH3PbI3 thin films prepared by pulsed laser deposition for optoelectronic applications

摘要

CH3NH3PbI3 thin films were prepared on glass substrates by pulsed laser deposition. The phase structural properties of the films deposited with different pulse repetition rates were analyzed carefully. The films deposited at 8 Hz and other rates show a single phase CH3NH3PbI3 and mixed CH3NH3PbI3-PbI2 phases, respectively. The prepared CH3NH3PbI3 film possesses absorption coefficients of 10(4) cm(-1) in the visible region and the optical band gap of 1.66 eV. The CH3NH3PbI3-Si heterojunction device was fabricated. The I-V characteristics of the heterojunction in the dark and under illumination exhibit good rectifying behavior and fast photoresponse. The rise and fall time of the device were measured to be 58.8 mu s and 1.9 mu s.