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Micro-nano manipulator based localized micro-area electrical impedance measurement for polycrystalline ZnO in scanning electron microscope

机译:扫描电子显微镜中基于微纳机械手的多晶ZnO局部微区电阻抗测量

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摘要

A measurement approach of localized micro-area electrical impedances based on micro-nano manipulator was developed for polycrystalline ZnO in scanning electron microscope. Two probes as microelectrodes clamped onto the manipulator were applied to probe the electrical impedances by positioning operations in demand across a single grain boundary and within adjacent grains. Equivalent circuits were performed to fit experimental data, represented by impedance complex planes, in the frequency range 20 Hz to 1 MHz. The minor fitting errors indicated the validity of equivalent circuit parameters, which demonstrated the fact that grain boundaries were the intrinsic nature of high-resistive impedance at low-frequency DC. A quantitative method of contact resistance was proposed by equivalent circuit fitting. High linear fitting degree of impedances at 20 Hz versus probing distances can be inferred that relatively uniform impurity doping exists in a single grain. The quantitative studies of electrical impedances, vertical and parallel to a single grain boundary, can account for the uneven degree of resistive capacity existing in different locations. Electrical resistances of multi-single grain boundaries can also be statistically utilized to predict the impedance properties of bulk ZnO at the certain lower frequency. (C) 2018 Elsevier B.V. All rights reserved.
机译:提出了一种基于微纳操纵器的多晶ZnO扫描电镜局部微区电阻测量方法。通过将需要定位的操作定位在单个晶粒边界和相邻晶粒内,使用两个探针(夹在操纵器上的微电极)来探测电阻抗。进行了等效电路以拟合在20 Hz至1 MHz频率范围内由阻抗复平面表示的实验数据。较小的拟合误差表明等效电路参数的有效性,这证明了晶界是低频直流下高阻阻抗的固有特性。通过等效电路拟合提出了一种接触电阻的定量方法。可以推断出在20 Hz时阻抗相对于探测距离的高线性拟合度,表明单个晶粒中存在相对均匀的杂质掺杂。垂直和平行于单个晶界的电阻抗的定量研究可以解释存在于不同位置的电阻容量的不均匀程度。多单晶界的电阻也可以统计地用于预测在一定较低频率下块状ZnO的阻抗特性。 (C)2018 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Materials Letters》 |2018年第may15期|273-275|共3页
  • 作者单位

    Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200444, Peoples R China;

    Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200444, Peoples R China;

    Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200444, Peoples R China;

    Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200444, Peoples R China;

    Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200444, Peoples R China;

    Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200444, Peoples R China;

    Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200444, Peoples R China;

    Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200444, Peoples R China;

    Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200444, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Electrical properties; Polycrystalline ZnO; Grain boundaries; Micro-area measurement; Scanning electron microscope;

    机译:电学性能;多晶ZnO;晶界;微区测量;扫描电镜;

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