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In-situ synthesis of V_2O_5 hollow spheres coated Ni-foam as binder-free electrode for high-performance symmetrical supercapacitor

机译:原位合成V_2O_5中空球体涂覆Ni-FoAM作为无粘合剂电极进行高性能对称超级电容器

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V2O5 hollow spheres coated Ni-foam (VO-HS/NF) is hydrothermally synthesized by an in-situ strategy. Diameter of VO-HS ranges from 300 nm to 500 nm, and the shell thickness is about 40 nm on average. The electrochemical properties of VO-HS/NF electrode demonstrate that it chemically stores charges by redox via the intercalation pseudocapacitance. The symmetrical supercapacitor (SSC) device is assembled using VO-HS/NF as the binder-free electrode and its electrochemical performance is studied by cyclic voltammetry (CV), galvanostatic charge-discharge (GCD) and electrochemical impedance spectroscopy (EIS). VO-HS/NF SSC device exhibits the pseudocapacitive behavior with specific capacitance of 135 mF.cm(-2) at 0.5 mA.cm(-2) and energy density of 356 mW.h.m(-2) at 3.5 W.m(-2) owing to the good ion response and high-quality contact between VO-HS and NF. This work provides an effective and facile strategy for synthesizing additive-free VO-HS/NF as high-performance electrodes for energy storage devices. (C) 2019 Elsevier B.V. All rights reserved.
机译:V2O5中空球体涂覆的Ni-FoAM(VO-HS / NF)通过原位策略进行水热合成。 VO-HS的直径范围为300nm至500nm,平均壳体厚度为约40nm。 VO-HS / NF电极的电化学性质表明,它通过插入假壳体通过嵌入氧化还原在化学上存储电荷。使用VO-HS / NF组装对称超电容器(SSC)器件,因为通过循环伏安法(CV),GALVANOTATIC电荷 - 放电(GCD)和电化学阻抗光谱(EIS)研究了无粘合剂电极及其电化学性能。 VO-HS / NF SSC器件在0.5 mA.CM(-2)(-2)和356mW.hm(-2)的能量密度下,在3.5wm(-2)(-2)时,vo-ps / nf ssc器件具有135mF.cm(-2)的特定电容的伪电容。(-2)(-2) )由于vo-hs和nf之间的良好的离子响应和高质量接触。这项工作提供了一种有效的和容易的策略,用于将无添加剂VO-HS / NF合成为能量存储装置的高性能电极。 (c)2019 Elsevier B.v.保留所有权利。

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