Accumulation Layers and Their Screening Lengths

摘要

In this paper an attempt is made to study the Screening Length (SL) in accumulation layers of tetragonal, non-linear optical, III–V, ternary and quaternary materials by formulating the appropriate dispersion relations within the frame work of Kane's k.p theory for the saidcompounds. It is found, taking accumulation layers of Cd_(3)As_(2), CdGeAs_(2), InAs, InSb, GaAs, Hg_(1–x )Cd_(x) Te, In_(1–x )Ga_(x) As_(y) P_(1–y ) lattice matchedto InP as examples that the inverse SL increases with increasing surface electric field and the numerical magnitude in each case is band structure dependent. We have also suggested and experimental method of determining the SL for materials having arbitrary dispersion laws.