Effect of insulating layer structural properties for thin-film electroluminescent devices

摘要

The effect of the structural properties of a Y_2O_3 insulating layer on the structural and electroluminescent (EL) properties of a ZnS emitting layer in a thin-film EL (TFEL) device has been investigated. The ZnS:Tm thin film, which has been developed as a blue-emitting material, was used as the emitting layer in the fabricated device. The best structural and EL properties of ZnS:Tm films were obtained by maintaining the substrate temperature at 200℃ during Y_2O_3 deposition. This deposition condition yields the best crystallinity of ZnS:Tm films with [111] orientation.