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Dielectric enhancement in (0 0 1)-textured BaTiO_3/LaNiO_3 superlattice

机译:(0 0 1)织构的BaTiO_3 / LaNiO_3超晶格中的介电增强

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摘要

Artificial superlattices consisting of ferroelectric BaTiO_3 (BTO), and conductive LaNiO_3 (LNO) layers were successfully prepared by rf magnetron sputtering with dual guns. The (00 1)-textured BTO and LNO layers were sequentially and coherently grown on (0 0 1)LNO/Pt/Ti/SiO_2/Si substrates. The formation of superlattice structure was confirmed from the X-ray diffraction, cross-sectional image of transmission electron microscopy and depth profile of secondary ion mass spectrometer. An expansion of the c-axis of the BTO lattice was induced by the insertion of the LNO layers having a smaller lattice, and the expansion only slightly increases with the reduction of stacking periodicity of BTO layer below 12 nm. The formation of a conductive interdiffusion layer of 1.5-2.0 nm thick between the adjacent BTO and LNO layers was also found. A significant, but nearly the same extent, dielectric enhancement was achieved in the BTO/LNO superlattice with stacking periodicity of BTO ≤ 12 nm. The temperature dependence of dielectric constant also reveals the shift-up of Curie temperature in the strained BTO.
机译:用双枪射频磁控溅射法成功地制备了由铁电体BaTiO_3(BTO)和导电LaNiO_3(LNO)层组成的人造超晶格。在(0 0 1)LNO / Pt / Ti / SiO_2 / Si衬底上依次并相干地生长(00 1)织构化的BTO和LNO层。通过X射线衍射,透射电子显微镜的横截面图像和二次离子质谱仪的深度分布证实了超晶格结构的形成。通过插入具有较小晶格的LNO层,引起了BTO晶格的c轴的扩展,并且该扩展仅随着BTO层的堆叠周期在12nm以下的减小而稍微增加。还发现在相邻的BTO和LNO层之间形成了1.5-2.0 nm厚的导电互扩散层。在BTO / LNO超晶格中,当BTO≤12 nm的堆积周期时,介电增强显着但几乎相同。介电常数的温度依赖性还揭示了应变BTO中居里温度的上移。

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