Effects of growth conditions on the acceptor activation of Mg-doped p-GaN

摘要

Mg-doped p-GaN films with various Mg flow rates were grown on a sapphire substrate by metal-organic chemical-vapor deposition (MOCVD) at a very low reactor pressure of 50 mbar. The surface roughness of R_(rms) decreased from 23.4 to 0.72nm with a decrease in the Mg flow rate from 118 nmol min~(-1) to 30 nmol min~(-1). In addition, a high Mg activation efficiency of ～5% was achieved by an optimized Mg flow rate. The photoluminescence (PL) and (002) X-ray diffraction (XRD) measurements indicated that the density of Mg_(Ga)-VN complexes and screw-type dislocations in the p-GaN films were reduced under a low Mg flow rate. Fitting the variable-temperature Hall data indicated that the acceptor activation energy and the compensation ratio were ～151 meV and ～10%, respectively. It is therefore believed that the decrease in the compensation effect, by decreasing the density of the compensating center such as Mg_(Ga)-VN complex and/or screw dislocation, plays an important role in improving the Mg acceptor activation efficiency in the low pressure growth of p-GaN films.