首页> 外文期刊>Materials Chemistry and Physics >Visible-light photocatalytic activity of Ni-doped TiO_2 from ab initio calculations
【24h】

Visible-light photocatalytic activity of Ni-doped TiO_2 from ab initio calculations

机译:从头算计算Ni掺杂TiO_2的可见光催化活性

获取原文
获取原文并翻译 | 示例
       

摘要

The geometrical structures and electronic properties of Ni-doped anatase and rutile TiOj were successfully calculated and simulated by a plane wave pseudopotential method based on density functional theory (DFT). Our results show that most Ni 3d states are located in the forbidden band of substitutional Ni to O-doped anatase and rutile TiO_2, and mix with 0 2p states, resulting in a decrease of the photon excitation energy and red-shift of absorption edge compared to pure anatase and rutile. For substitutional Ni to Ti-doped anatase TiO_2 under O-rich growth condition, the band gap has a slight decline of about 0.05 eV compared with pure anatase TiO_2 and contains a series of impurity energy levels, which may be responsible for the experimental photocatalytic activity and red-shift of absorption edge.
机译:利用基于密度泛函理论(DFT)的平面波pseudo势法成功地计算并模拟了掺Ni的锐钛矿和金红石TiOj的几何结构和电子性能。我们的结果表明,大多数Ni 3d态都位于Ni取代O掺杂的锐钛矿和金红石TiO_2的禁带内,并与0 2p态混合,导致光子激发能的下降和吸收边的红移。纯锐钛矿和金红石。对于在富氧生长条件下用Ni代替Ti掺杂的锐钛矿型TiO_2,带隙比纯锐钛矿型TiO_2的带隙略微下降了约0.05 eV,并包含一系列杂质能级,这可能与实验的光催化活性有关。和吸收边缘的红移。

著录项

  • 来源
    《Materials Chemistry and Physics》 |2012年第3期|746-750|共5页
  • 作者单位

    Institute of Modern Physics, Northwest University, Xi'an 710069, PR China;

    Institute of Modern Physics, Northwest University, Xi'an 710069, PR China;

    Department of Applied Chemistry, Institute of Molecular Science and Center for Interdisciplinary Molecular Science, National Chiao-Tung University, Hsinchu 30050, Taiwan;

    Department of Physics, Northwest University, Xi'an 710069, PR China;

    Institute of Modern Physics, Northwest University, Xi'an 710069, PR China;

    School of Chemical Engineering, Northwest University, Xi'an 710069, PR China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A. Semiconductors; C.Ab initio calculations; D. Electronic structure; D. Optical properties;

    机译:A.半导体C.Ab从头算;D.电子结构;D.光学性质;
  • 入库时间 2022-08-18 00:39:39

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号