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首页> 外文期刊>Materials Chemistry and Physics >Effects of cobalt doping on the microstructure, complex impedance and activation energy in 0.2PZN-0.8PZT ceramics
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Effects of cobalt doping on the microstructure, complex impedance and activation energy in 0.2PZN-0.8PZT ceramics

机译:钴掺杂对0.2PZN-0.8PZT陶瓷微观结构,复阻抗和活化能的影响

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摘要

A CoCO_3 added Pb((Zn_(1/3)Nb_(2/3))_(0.20)(Zr_(0.50)Ti_(0.50))_(0.80))O_3 (0.2PZN-0.8PZT + xCoCO_3) system has been prepared and investigated. The tetragonal distortion c/a of specimens increases abruptly with increasing CoCO_3 content, but is almost constant for x ≥ 0.2 wt%, confirming that the solubility limit of CoCO_3 in 0.2PZN-0.8PZT is about x = 0.2 wt%. Complex impedance spectroscopic analysis, in the temperature range of 250-300 ℃ from 1 mHz to 10 MHz, provides another evidence that 0.2 wt% is indeed the solubility limit. Both spectroscopic peaks of Z" and M" vs frequency are observed in the similar frequency region, indicating the approximated-Debye behavior in the studied systems. Temperature dependent bulk relaxation values are found to obey linear-Arrhenius fit. Based on the activation energy values, it can be concluded that in CoCO_3 doping 0.2PZN-0.8PZT, both the single and double ionized oxygen-vacancies contribute to the conduction process.
机译:添加了CoCO_3的Pb((Zn_(1/3)Nb_(2/3))_(0.20)(Zr_(0.50)Ti_(0.50))((0.80))O_3(0.2PZN-0.8PZT + xCoCO_3)系统具有准备和调查。样品的四方畸变c / a随着CoCO_3含量的增加而突然增加,但对于x≥0.2 wt%几乎是恒定的,这证实了CoCO_3在0.2PZN-0.8PZT中的溶解度极限约为x = 0.2 wt%。在1 mHz到10 MHz的250-300℃的温度范围内进行的复阻抗谱分析提供了另一个证据,表明0.2 wt%的确是溶解度极限。在相似的频率范围内观察到Z“和M”的光谱峰与频率的关系,表明在研究的系统中近似的德拜行为。发现与温度有关的体积弛豫值服从线性-Arrhenius拟合。根据活化能值,可以得出结论,在CoCO_3掺杂0.2PZN-0.8PZT中,单电离和双电离的氧空位都有助于导电过程。

著录项

  • 来源
    《Materials Chemistry and Physics》 |2013年第1期|358-365|共8页
  • 作者单位

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ceramics; Microstructure; Electrical conductivity; Defects;

    机译:陶瓷;微观结构电导率;瑕疵;

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