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Oxygen partial pressure dependence of the structural properties of CdO thin films deposited by a modified reactive vacuum evaporation process

机译:氧分压对改性反应真空蒸镀法沉积CdO薄膜结构性能的依赖性

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摘要

Thin films of cadmium oxide were thermally deposited on glass substrates at partial pressures of oxygen, pO(2) in the range 1.33 x 10(-2) to 0.133 Pa at a substrate temperature of 160 degreesC. Energy dispersive analysis of X-ray fluorescence (EDAX) revealed that the CdO films deposited at pO(2) value of 4.00 x 10(-2) Pa. were nearly stoichiometric. X-ray diffractometry (XRD) confirmed the polycrystalline nature of the film structure. All the films showed an fee structure of the NaCl-type, as the dominant phase. The films exhibited preferred orientation along the (111) diffraction plane. The texture coefficients calculated for the various planes at different oxygen partial pressures (pO(2)) indicated that the maximum prefer-red orientation of the films occurred along the (111) plane at an oxygen partial pressure of 4.00 x 10(-2) Pa. This was interpreted in terms of oxygen chemisorption and desorption processes. The lattice parameters determined from the diffraction peaks were in the range 4.655-4.686 Angstrom. The average lattice parameter a(0) found by extrapolation using the Nelson-Riley function was 4.696 Angstrom. Both the lattice parameter and the crystallite size were found to increase with increased partial pressure of oxygen. On the other hand, the strain and dislocation density were found to decrease as the partial pressure of oxygen was raised. A maximum (80%) in the optical transmittance lambda = 600 nm and minimum in the electrical resistivity (9.1 X 10(-4) Omega CM) of the films occurred at an optimum partial pressure of oxygen of 4.00 x 10(-2) Pa. The results are discussed. (C) 2004 Published by Elsevier B.V.
机译:在160℃的基板温度下,在1.33 x 10(-2)至0.133 Pa的氧气分压pO(2)下,将氧化镉薄膜热沉积在玻璃基板上。 X射线荧光(EDAX)的能量色散分析表明,以4.00 x 10(-2)Pa。的pO(2)值沉积的CdO膜几乎是化学计量的。 X射线衍射法(XRD)证实了膜结构的多晶性质。所有的膜都显示出NaCl型的电荷结构,作为主要相。所述膜表现出沿(111)衍射面的优选取向。在不同的氧分压(pO(2))下针对各个平面计算的织构系数表明,在4.00 x 10(-2)的氧分压下,膜的最大优先红色取向沿(111)平面发生。 Pa。这是根据氧化学吸附和解吸过程来解释的。由衍射峰确定的晶格参数在4.655-4.686埃的范围内。通过使用Nelson-Riley函数外推发现的平均晶格参数a(0)为4.696埃。发现晶格参数和微晶尺寸均随着氧分压的增加而增加。另一方面,发现随着氧分压的升高,应变和位错密度降低。在4.00 x 10(-2)的最佳氧气分压下,薄膜的最大透光率λ= 600 nm(80%)和最小电阻率(9.1 X 10(-4)Omega CM) Pa。讨论了结果。 (C)2004由Elsevier B.V.发布

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