首页> 外文期刊>Material science foundations >CONCENTRATION OF POINT DEFECTS IN OXIDES: Ni_(1-δ)O, Co_(1-δ)O, Fe_(1-δ)O, Mn_(1-δ)O, Cu_(2-δ)O AND TiO_(2-δ) SHORT SUMMARY AND DISCUSSION
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CONCENTRATION OF POINT DEFECTS IN OXIDES: Ni_(1-δ)O, Co_(1-δ)O, Fe_(1-δ)O, Mn_(1-δ)O, Cu_(2-δ)O AND TiO_(2-δ) SHORT SUMMARY AND DISCUSSION

机译:氧化物中的点缺陷浓度:Ni_(1-δ)O,Co_(1-δ)O,Fe_(1-δ)O,Mn_(1-δ)O,Cu_(2-δ)O和TiO_(2) -δ)简要概述和讨论

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The diagrams of the concentrations of defects, presented in previous sections, allow for an analysis of the concentrations of ionic defects and electronic defects and their changes depending on the oxygen pressure and the deviation from the stoichiometry. From the analysis of diagrams for the oxides: Ni_(1-δ)O, Co_(1-δ)O, Fe_(1-δ)O, Mn_(1-δ)O, having the same cubic structure of NaCl-type, it transpires that despite a small difference in the electronic configuration of metal ions, their oxides differ significantly by the range of oxygen pressures where the individual phases exist and by the structure and concentrations of point defects. In these oxides, the dominating defects are cation vacancies and electron holes. Each oxide has significantly different diagram of the concentrations of defects. The oxygen pressure where the oxides: NiO, CoO and FeO could have reached the stoichiometric composition is by a few orders of magnitude lower than the decomposition pressure. An exception is MnO which has the lowest decomposition pressure (10~(-27) - 10~(-15) atm in the temperature range of 1173 - 1773 K) and it reaches the stoichiometric composition near this pressure. On the other hand, the Cu_(2-δ)O oxide has a different crystallographic structure (cuprite-type (C3)). It shows a significant concentration of defects in the cation and oxygen sublattices and in the range of its existence the Cu_2O reaches the stoichiometric composition. Significantly different from the above oxides is the titanium oxide, TiO_(2-δ) (with rutile-type structure), which, before all, has a significant concentration ofoxygen defects, but also cation defects and which is an electronic semiconductor. The TiO_2 reaches the stoichiometric composition at pressures near 1 atm. On the other hand, the highest concentration of defects occurs at the lowest oxygen pressures, at the TiO_(2-δ)/Ti_(16)O_(31) phase boundary.
机译:前面各节中提供的缺陷浓度图表可以分析离子缺陷和电子缺陷的浓度,以及它们的变化,具体取决于氧气压力和化学计量的偏差。从对氧化物的分析来看:具有相同的NaCl型立方结构的Ni_(1-δ)O,Co_(1-δ)O,Fe_(1-δ)O,Mn_(1-δ)O可以看出,尽管金属离子的电子构型差异很小,但它们的氧化物在各相存在的氧气压力范围以及点缺陷的结构和浓度方面却存在显着差异。在这些氧化物中,主要缺陷是阳离子空位和电子空穴。每种氧化物都有明显不同的缺陷浓度图。氧化物:NiO,CoO和FeO可能达到化学计量组成的氧气压力比分解压力低几个数量级。 MnO例外,它的分解压力最低(在1173至1773 K的温度范围内为10〜(-27)-10〜(-15)atm),并且在该压力附近达到化学计量组成。另一方面,Cu_(2-δ)O氧化物具有不同的晶体学结构(铁氧体型(C3))。它显示出阳离子和氧亚晶格中大量的缺陷浓度,并且在其存在范围内Cu_2O达到化学计量组成。与上述氧化物明显不同的是二氧化钛TiO_(2-δ)(具有金红石型结构),它毕竟具有显着浓度的氧缺陷,但也有阳离子缺陷,是电子半导体。 TiO_2在接近1个大气压的压力下达到化学计量组成。另一方面,在最低的氧气压力下,在TiO_(2-δ)/ Ti_(16)O_(31)相界处出现的缺陷浓度最高。

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    《Material science foundations》 |2015年第2015期|513-567|共55页
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