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Development of ultra-compact plastic-packaged high-isolation GaAs SPDT switch

机译:超紧凑型塑料封装高绝缘GaAs SPDT开关的开发

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摘要

A high-isolation switch IC with 31 dB isolation and 0.88 dB insertion loss at 1.65 GHz, sealed in a six-pin ultra-compact plastic package with approximately 1/4 of the conventional area, was developed for the first time. Analysis using electromagnetic-field simulation of the isolation characteristics between lead pins of the ultra-compact package and a new design method (which takes into account deterioration of the isolation characteristics due to the plastic molding) were used for this IC. Layout design using electromagnetic-field simulation also attempted to minimize chip size.
机译:首次开发了一种高隔离度开关IC,它具有1.65 GHz隔离度,31 dB隔离度和0.88 dB的插入损耗,密封在六引脚超紧凑塑料封装中,其面积约为传统面积的1/4。该集成电路采用电磁场模拟法对超紧凑型封装的引脚之间的绝缘特性进行了分析,并采用了一种新的设计方法(考虑了塑料成型导致的绝缘特性下降)。使用电磁场仿真的布局设计也试图最小化芯片尺寸。

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