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首页> 外文期刊>IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging >Application of a CFD tool in designing a fountain plating cell for uniform bump plating of semiconductor wafers
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Application of a CFD tool in designing a fountain plating cell for uniform bump plating of semiconductor wafers

机译:CFD工具在设计用于对半导体晶片进行均匀凸点电镀的润版池中的应用

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摘要

Fountain plating is a widely used method for electroplating bumps for flip chip and tape automated bonding (TAB) applications. Ideally, the plating process should produce metal bumps of uniform height (both within the bump and across the wafer) and flat-end surface in order to make good bonding to a device package. However, varying degrees of deposit uniformity have always been an issue in electroplating due to the current density distribution on the wafer, the electric field between the anode plate and the wafer, and the plating solution flow motion. The problem of nonuniform bump plating is especially serious in indium. Plated indium bumps tend to be much thicker on the sides corresponding to the direction of flow, creating nonuniform geometry and possible electric shorts. An improvement on fountain style plating cells has been developed for better control of deposit uniformity during bump plating operations. By applying a computational fluid dynamics (CFD) tool to analyze the flow motion inside the fountain plating cell, a favorable plating solution flow path, is created so that uniform flow will reach the wafer surface. Experiments are performed to verify the CFD model. Indium bumps are plated to a 10-cm diameter wafer in the fountain cell, Photographic results illustrate that when the anode plate is too close to the solution inlet plane, over-plating occurs, resulting in tear drop or comet shaped bumps. However, with a proper distance between the anode and the inlet plane, uniform bumps are created.
机译:喷镀是一种广泛用于倒装芯片和胶带自动焊接(TAB)应用的凸块电镀方法。理想情况下,电镀工艺应产生高度均匀的金属凸块(在凸块内和整个晶片上)和平坦端表面,以实现与器件封装的良好粘合。然而,由于晶片上的电流密度分布,阳极板与晶片之间的电场以及镀敷溶液的流动运动,沉积均匀性的不同程度一直是电镀中的问题。铟的凸块镀层不均匀的问题尤其严重。电镀的铟凸块在与流动方向相对应的侧面上往往要厚得多,从而形成不均匀的几何形状并可能发生电短路。已经开发出对喷泉式电镀池的改进,以在凸点电镀操作期间更好地控制沉积均匀性。通过应用计算流体动力学(CFD)工具来分析润版液内部的流动运动,可以创建良好的镀液流动路径,从而使均匀的流动到达晶圆表面。进行实验以验证CFD模型。铟凸块镀在喷泉池中直径为10厘米的晶片上,照相结果表明,当阳极板太靠近溶液入口平面时,会发生过度镀覆,从而导致滴落或彗星状凸块。然而,在阳极和入口平面之间具有适当的距离的情况下,会产生均匀的凸起。

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