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Synthesis of Narrow Molecular Weight Distribution Copolymers for ArF Photoresist Materials by Nitroxide Mediated Polymerization

机译:氮氧化物介导的聚合反应合成ArF光阻材料窄分子量分布共聚物

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摘要

ArF candidate photoresist polymers have been synthesized by nitroxide mediated polymerization (NMP). Statistical copolymerizations of a-gamma butyrolactone methacrylate, 3-hydroxy-1-adamantyl methacrylate, and 2-methyl 2-adamantyl methacrylate with 5-10 mol% of controlling comonomers (i.e., styrene, p-acetoxystyrene, 2-vinyl naphthalene, acrylonitrile, and pentafluorostyrene), which are necessary for controlled polymerization of methacrylates by NMP with the unimolecular alkoxyamine initiator BlocBuilder, have been used. As little as 5 mol% controlling comonomer in the feed is demonstrated to be sufficient to produce linear evolution of number average molecular weight against conversion (X) up to X = 0.7 for relatively low target degrees of polymerization. All of the resulting copolymers have relatively low dispersities ((M) over bar (w)/(M) over bar (n) approximate to 1.4) and show relatively low absorbance at 193 nm, comparable to other 193 nm candidate photoresists reported previously, with the exception of VN-containing copolymer.
机译:ArF候选光致抗蚀剂聚合物已经通过氮氧化物介导的聚合(NMP)合成。甲基丙烯酸α-丁内酯,甲基丙烯酸3-羟基-1-金刚烷基酯和甲基丙烯酸2-甲基2-金刚烷基酯与5-10 mol%的控制共聚单体(即苯乙烯,对乙酰氧基苯乙烯,2-乙烯基萘,丙烯腈)的统计共聚已经使用了NMP和单分子烷氧基胺引发剂BlocBuilder进行甲基丙烯酸酯的受控聚合所必需的。对于相对较低的目标聚合度,进料中低至5 mol%的控制共聚单体已证明足以产生数均分子量相对于转化率(X)的线性演变,最高可达X = 0.7。与先前报道的其他193 nm候选光刻胶相比,所有所得共聚物均具有相对较低的分散度(相对于(bar)的(M)/相对于bar(n)的(M)大约为1.4),并且在193 nm处显示相对较低的吸光度,除了含VN的共聚物。

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