Orienting the Demixion of a Diblock-copolymer Using 193 nm Interferometric Lithography for the Controlled Deposition of Nanoparticles

摘要

DUV interferometric lithography and diblock copolymer self-organization have successfully been combined to provide a simple and highly collective nanopatterning technique enabling the organization of nanoparticles over several orders of magnitude, from nanometre to millimetre. The nanostructural changes at the surface of the polymer film after thermal annealing have been monitored by AFM and the process parameters optimized for obtaining a long-range organization of the lamellar domains. In particular, the impact of the annealing conditions and geometric parameters of the substrate patterns have been investigated. The nanopatterns resulting from the lamellar demixion of (PS-b-MMA) were used for a controlled deposition of nanoparticles. The affinity of the hydrophobic particles for the PS block was demonstrated, opening new doors towards the preparation of high-density arrays of nanoparticles with potential applications in data storage.