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Vertical-Cavity Silicon-Integrated Laser with In-Plane Waveguide Emission at 850 nm

机译:垂直腔硅集成激光器,在850 nm内具有平面波导发射

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A continuous-wave electrically-pumped short-wavelength hybrid vertical-cavity silicon-integrated laser (VCSIL) with in-plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. The coupling from the vertical cavity into the in-plane SiN waveguide is achieved by a weak grating on the SiN waveguide placed inside the cavity. The grating provides coupling, sets the polarization of the lasing output, and provides transverse mode control. A 5 mu m oxide-aperture diameter device with a threshold current of 1.1 mA produces 73 mu W single-sided waveguide-coupled optical output power at 2.6 mA bias current at a wavelength of 856 nm and a side-mode suppression ratio (SMSR) of 29 dB.
机译:实验证明了在氮化硅(SiN)波导中具有面内发射的连续波电泵短波长混合垂直腔硅集成激光器(VCSIL)。从垂直腔到面内SiN波导的耦合是通过放置在腔内部的SiN波导上的弱光栅实现的。光栅提供耦合,设置激光输出的偏振,并提供横向模式控制。一种具有1.1 mA阈值电流的5μm氧化物孔径器件,在856 nm波长和边模抑制比(SMSR)的情况下,在2.6 mA偏置电流下可产生73μW单面波导耦合光输出功率。 29分贝

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