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机译:垂直腔硅集成激光器,在850 nm内具有平面波导发射
Univ Ghent, IMEC, Photon Res Grp, Technol Pk Zwijnaarde 15, B-9052 Ghent, Belgium|Univ Ghent, Ctr Nano & Biophoton, B-9000 Ghent, Belgium;
Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gteborg, Sweden;
Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gteborg, Sweden;
Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gteborg, Sweden;
Univ Ghent, IMEC, Photon Res Grp, Technol Pk Zwijnaarde 15, B-9052 Ghent, Belgium|Univ Ghent, Ctr Nano & Biophoton, B-9000 Ghent, Belgium;
Univ Ghent, IMEC, Photon Res Grp, Technol Pk Zwijnaarde 15, B-9052 Ghent, Belgium|Univ Ghent, Ctr Nano & Biophoton, B-9000 Ghent, Belgium;
intra-cavity grating; on-chip laser source; semiconductor lasers; silicon photonics; vertical-cavity silicon-integrated laser;
机译:基于InGaAs / Algaas量子阱的850-nm单模垂直腔表面发射激光器的发射线宽和α系数
机译:850 nm垂直腔面发射激光器的边缘自发发射
机译:通过粘合剂键合的硅集成混合腔850 nm VCSEL:键合界面厚度对激光性能的影响
机译:面内发射到硅波导中的混合III-V / SOI单模垂直腔激光器
机译:850 nm垂直腔面发射激光器的设计,制造和表征。
机译:直的远程表面等离子体Polariton波导传感器在λ0= 850nm工作
机译:具有腔内光栅耦合到SiN波导电路的845 nm GaAs垂直腔硅集成激光器的设计