Low-temperature growth of highly conductive and transparent aluminum-doped ZnO film by ultrasonic-mist deposition

摘要

doped ZnO (AZO) thin films are grown by ultrasonic-mist deposition method for the transparent conducting oxides (TCO) applications at low temperatures. The AZO films can be grown at a temperature as low as 200℃ with zinc acetylacetonate and aluminum acetylacetonate sources. The lowest resistivity of grown AZO films is l.0 × 10~(-3) Ω·cm and the lowest sheet resistance of 1 μm thick films is 10 Ω/□, which is close to that of commercial indium tin oxide (ITO) or Asahi U-type SnO_2: F glass. The highest carrier concentration and mobility are 5.6 × 10~(20) cm~(-3) and 15 cm~2/V-sec, respectively. Optical transmittance of the AZO films is found over 75% for all growth conditions. We believe that the properties of grown AZO films in this study are the best among all reported previously elsewhere by solution processes.