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Investigation of electronic processes at the grain boundaries of a multilayer varistor

机译:研究多层压敏电阻晶界处的电子过程

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摘要

Dielectric properties and capacitance-voltage characteristics of the ZnO multilayer varistors were investigated. Three dielectric absorptions were observed in the frequency range from 10~4 to 10~6 Hz. These absorptions are considered to be due to the electron trapping at the grain boundary, Thermally electronic polarization and a migration loss. The C-V curves have a slight decrease, Followed by an increase and sharp decrease to a negative capacitance.
机译:研究了ZnO多层压敏电阻的介电性能和电容电压特性。在10〜4至10〜6 Hz的频率范围内观察到三种介电吸收。这些吸收被认为是由于电子在晶界处俘获,热电子极化和迁移损耗所致。 C-V曲线略有下降,其后逐渐增加并急剧下降至负电容。

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