Low-Temperature Processing of Ferroelectric Layer-Structured Perovskite Thin Films by Using an Alkoxide Complex

摘要

The alkoxy-derived thin films on Pt-passivated silicon substrates crystallized to single-phase porovskite SBT at temporatures below 550 deg C. The crystalline porfection improved and the crystallite size increased with temporatures up to 70O deg. C. Tbe adhesion, crystallinity, and microstructure of tbe Pt bottom electrodes were found to affect the crystallographic orientation of the SBT thin films. The SBT thin film showing higher degrees of (ll5) or (020)/(200) orientations, echibited improved ferroclectric and fatigue properties.