Study of the Sensing Mechanism of SnO_2 Thin-Film Gas Sensors Using Hall Effect Measurements

摘要

Hall effect measurements are one of the most powerful techniques for obtaining information about the conduction mechanisms in polycrystalline semiconductor materials, which is the basis for understanding semiconductor gas sensors. In order to investigate the correlation between the microscopic characteristics and the macroscopic performances exhibited by undoped tin oxide gas sensors deposited by spray pyrolysis, Hall effect measurements were performed at different temperature, from room temperature up to 500 K, and in the presence of two different atmospheres, air and methane.