Simulation of Silicon Carbide Converted Graphite by Chemical Vapor Reaction Method

摘要

A two-dimensional Monte Carlo simulation has been used to investigate the effect of the sintering temperature and the porosity of graphite substrate on the silicon carbide conversion layer of the graphite substrate. Chemical vapor reaction method is based on the carbothermal reduction of silica. The microstructure of the model employed is mapped onto a discrete triangular lattice. On the assumption that each lattice is able to include several kind of gaseous reactant or solid element, the silicon carbide conversion layer is formed through a reaction between carbon of graphite substrate and SiO gas.