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Characterization of Heating Elements with Cobalt Silicide Films for InkJet Printer

机译:喷墨打印机用硅化钴膜加热元件的特性

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The back shot type inkjet printing head was designed and fabricated using cobalt silicide films as a heating element. The cobalt silicide films were prepared on poly-Si/SiO_2/Si substrates by Co metal deposition using the e-beam evaporation and the rapid thermal annealing process. The stable CoSi_2 phase with a sheet resistance of 1.7 Ω/γ was obtained at 800 ℃ for 20 seconds under N_2 atmosphere. From the FE-SEM morphology, the film structure (thickness of each layer) of the heating element was found to be PE-oxide/CoSi_2 (580oA)/Poly-Si (6200A)/SiO_2 on Si substrate. The temperature resistance coefficient of the heating element was calculated by about 0.0014 ℃~~(-1). The resistance was decreased slightly with increasing the input voltage from 2V to 10V, and showed constant values with 38 Ω at above 11V. The breakdown voltage was 19V. There was no distinct change in the resistances of heating elements after 10~8 pulse cycles at the input voltage of 11V and 15V. In addition, the ink. bubbles were observed clearly around the inkjet heater, which was operated at the input voltage of 15V.
机译:使用硅化钴膜作为加热元件来设计和制造背射式喷墨打印头。采用电子束蒸发和快速热退火工艺,通过钴金属沉积在多晶硅/ SiO_2 / Si衬底上制备了硅化钴膜。在N_2气氛下,于800℃下20秒钟,获得了表面电阻为1.7Ω/γ的稳定CoSi_2相。根据FE-SEM的形态,发现加热元件的膜结构(各层的厚度)为Si衬底上的PE-氧化物/ CoSi_2(580oA)/ Poly-Si(6200A)/ SiO_2。加热元件的耐热系数约为0.0014℃〜(-1)。随着输入电压从2V增加到10V,电阻略有降低,在11V以上显示为38Ω的恒定值。击穿电压为19V。在输入电压为11V和15V的情况下,经过10〜8个脉冲周期后,加热元件的电阻没有明显变化。另外,墨水。在15V的输入电压下运行的喷墨加热器周围清晰可见气泡。

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