Magnetic and Dielectric Properties of a Metal/Cr_2O_3/Cr_2O_(3-x)/Cr_2O_3/Semiconductor Capacitor Using Magneto-electric Materials

摘要

We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr_2O_3)/semiconductor (Si) (MIS) capacitor composed of magneto-electric (ME) materials. The capacitor has anti-ferromagnetic properties and a very small electrically induced magnetic moment. It also shows capacitance-voltage (C-V) properties typical of a Si-MIS capacitor without any hysteresis. By inserting a thin Cr_2O_(3-x) layer, the C-V curve has a hysteresis window with a clockwise trace, which indicates that electrons have been injected into the Cr_2O_(3-x) layer. These results indicate that this MIS capacitor contains a floating gate and an ME insulating layer in a single system.