Relationship between magneto-capacitance-voltage characteristics and magnetoresistance of Au/Cr_2O_2/Cr_2O_(3-x)/FeCr/CeO_2/Si metal-insulator-semiconductor capacitor

摘要

We investigated the relationship between the magneto-capacitance-voltage characteristics and the magnetoresistance of a metal (Au)/insulator (Cr_2O_3/Cr_2O_(3-x)/FeCr/CeO_2/semiconductor (Si) capacitor, in which the insulator consists of magnetic materials. By applying an electric field, electrons propagating through the FeCr/CeO_2 layer from Si were injected into the Cr_2O_(3-x) layer. When a magnetic field was applied, the resistance of this capacitor above the flat-band voltage was reduced, causing the hysteresis window to become large. This result indicates that this capacitor, which contains a magnetic gate insulator, has the potential to be used in multilevel memories by the application of an external magnetic field.