Ga_2O_3 Films Grown on Sapphire by the Thermal Evaporation of GaN Powders

摘要

We have prepared the gallium oxide (Ga_2O_3) films on sapphire substrates by a thermal evaporation of GaN powders. We have characterized the films by using the x-ray diffraction (XRD), scanning electron microscopy (SEM), and the photoluminescence (PL). SEM and XRD revealed that the deposits were Ga_2O_3thin films with monoclinic structure. PL spectrum of Ga_2O_3 films under excitation at 325 nm showed a blue emission.