首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Theory Of Electron Tunneling Through A Scanning Tunneling Microscopy-tip/ Quantum Dot Junction
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Theory Of Electron Tunneling Through A Scanning Tunneling Microscopy-tip/ Quantum Dot Junction

机译:通过扫描隧道显微镜尖端/量子点结的电子隧道理论

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摘要

Electron transport properties of an isolated quantum dot sandwiched between a metallic contact and a scanning tunneling microscopy tip are theoretically investigated. Keldysh-Green's function technique is used to calculate the tunneling current of an Anderson model with multiple energy levels, The spectral function of the quantum dot system (with arbitrary number of energy levels) embedded in a tunnel junction is derived and used to calculate the tunneling current spectra. Finally, the authors calculate the emission spectra due to the electron-hole recombination that occurs in the case of bipolar tunneling, where both electrons and holes are allowed to simultaneously tunnel into the quantum dot. The authors find dramatic changes in the emission spectra as the applied bias is varied.
机译:理论上研究了夹在金属触点和扫描隧道显微镜尖端之间的孤立量子点的电子传输特性。利用Keldysh-Green函数技术来计算具有多个能级的安德森模型的隧穿电流,得出嵌入在隧道结中的量子点系统(具有任意数量的能级)的光谱函数,并用于计算隧穿当前频谱。最后,作者计算由于双极隧穿情况下发生的电子-空穴复合而产生的发射光谱,在这种情况下,电子和空穴都可以同时隧穿到量子点中。作者发现,随着施加偏压的变化,发射光谱会发生巨大变化。

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