Development of a super-high-sensitivity image sensor using 640×480 pixel active-matrix high-efficiency electron emission device

Nobuyasu Negishi; Takanobu Sato; Youhei Matsuba; Ryota Tanaka; Tomonari Nakada; Kazuto Sakemura; Yoshiyuki Okuda; Atsushi Watanabe; Takamasa Yoshikawa; Kiyohide Ogasawara; Masakazu Nanba; Saburo Okazaki; Kenkichi Tanioka; Norifumi Egami; Nobuyoshi Koshid

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Development of a super-high-sensitivity image sensor using 640×480 pixel active-matrix high-efficiency electron emission device

机译：使用640×480像素有源矩阵高效电子发射器件的超高灵敏度图像传感器的开发

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摘要

An extremely high-sensitivity image sensor has been developed with a combination of an active-matrix high-efficiency electron emission device (HEED) array and a high-gain avalanche rushing amorphous photoconductor (HARP) target. Following the description

机译：结合有源矩阵高效电子发射器件（HEED）阵列和高增益雪崩冲激非晶光电导体（HARP）目标的组合，开发出了一种极高灵敏度的图像传感器。按照说明

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《Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures》 |2008年第2期|p.711-715|共5页
作者
Nobuyasu Negishi; Takanobu Sato; Youhei Matsuba; Ryota Tanaka; Tomonari Nakada; Kazuto Sakemura; Yoshiyuki Okuda; Atsushi Watanabe; Takamasa Yoshikawa; Kiyohide Ogasawara; Masakazu Nanba; Saburo Okazaki; Kenkichi Tanioka; Norifumi Egami; Nobuyoshi Koshid;
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作者单位

Corporate R&D Laboratories, Pioneer Corporation, 6-1-2 Fujimi, Tsurugashima, Saitama 350-2288, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程物理学;
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专利

1. 640×480 pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target [J] . Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures . 2010,第1期

机译：高增益雪崩冲非晶光电导体靶的640×480像素有源矩阵Spindt型场致发射器阵列图像传感器
2. 640×480 pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target [J] . M. Nanba, Y. Takiguchi, Y. Honda, Journal of Vacuum Science & Technology . 2010,第1期

机译：高增益雪崩冲非晶光电导体靶的640×480像素有源矩阵Spindt型场致发射器阵列图像传感器
3. 2/3 in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device [J] . Nakada Tomonari, Sato Takanobu, Matsuba Yohei, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures . 2010,第2期

机译：具有有源矩阵高效电子发射装置的2/3英寸超高灵敏度图像传感器
4. 640×480 pixel active-matrix HEED imaging sensor with HARP target [C] . N. Negishi, T. Sato, Y. Matsuba, International Vacuum Nanoelectronics Conference . 2007

机译：640×480像素主动矩阵Heed成像传感器，具有HARP目标
5. Active-matrix organic polymer light -emitting display: Light -emitting devices and pixel electrode circuit [D] . Hong, Yongtaek 2003

机译：有源矩阵有机聚合物发光显示器：发光器件和像素电极电路
6. Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor [O] . Liisa M. Hirvonen, Klaus Suhling 2016

机译：电子轰击像素图像传感器的光子计数成像
7. 1-inch 256*192 Pixel HARP Image Sensor with Active-matrix HEED [O] . Masakazu Nanba, Kazunori Miyakawa, Toshihisa Watabe, 2007

机译：1英寸256 * 192像素竖琴图像传感器，具有主动矩阵
8. Low-Light-Level 640x480-pixel CCD Camera for Night Vision Applications. [R] . Reich, R. K., Burke, B. E., McGonagle, W. H., 1998

机译：用于夜视应用的低亮度640x480像素CCD相机。

Development of a super-high-sensitivity image sensor using 640×480 pixel active-matrix high-efficiency electron emission device

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