首页> 外文期刊>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures >640×480 pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target
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640×480 pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target

机译:高增益雪崩冲非晶光电导体靶的640×480像素有源矩阵Spindt型场致发射器阵列图像传感器

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A 640×480 pixel field emitter array (FEA) image sensor with a high-gain avalanche rushing amorphous photoconductor (HARP) target was fabricated and tested as a step toward the development of ultrahigh-sensitivity compact image sensors for high-definition television cameras. For this sensor, an active-matrix Spindt-type FEA integrated with scanning circuits and a magnetic electron focusing system were designed, and a 15-μm-thick-HARP target was used. The experimental results revealed that the prototype sensor had enough resolution for its pixel number and high sensitivity due to the electrons emitted from the active-matrix FEA being focused onto the HARP target.
机译:制作并测试了具有高增益雪崩冲型非晶光电导体(HARP)靶标的640×480像素场发射器阵列(FEA)图像传感器,作为朝着面向高清电视摄像机的超高灵敏度紧凑型图像传感器发展的一步。对于该传感器,设计了集成有扫描电路和磁性电子聚焦系统的有源矩阵Spindt型FEA,并使用了厚度为15μm的HARP靶。实验结果表明,由于从有源矩阵FEA发射的电子被聚焦到HARP目标上,原型传感器具有足够的像素数分辨率和高灵敏度。

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