Development of dry-processed silicon nanodot planar cold cathode and its electron emission properties

摘要

A dry-processed planar-type cold cathode has been developed using a nanometer-sized Si dot film as an electron drift layer. Multilayered Si-nanodot films were fabricated on a n-type single-crystalline Si (c-Si) wafer by sequential dry processing (low-pressure chemical vapor deposition) and subsequent thermal oxidation. Planar-type cold cathodes composed of a thin Au film, a nanometer-sized Si dot film, a c-Si substrate, and a back contact exhibit fluctuation-free electron emission with small angle dispersion. The emission efficiency was 0.14% at an applied voltage of 20 V for the device with the average Si dot size of 1.3 nm. The emission model based on multiple tunneling cascade in nanocrystalline silicon dot chain interconnected via tunnel oxide has been supported by the device fabricated using dry processing.